Title :
1 V UWB CG LNA at 3–8 GHz with bulk-bias method
Author :
Yenheng Chen ; Jengrern Yang
Author_Institution :
Dept. of Commun. Eng., Yuan Ze Univ., Jhongli, Taiwan
Abstract :
The low-noise amplifier (LNA) is used for an ultra-wideband (UWB) application. The UWB common gate LNA is designed using standard 0.18 um CMOS technology. Because of the common gate configuration, broadband input matching is obtained and the noise does not increase rapidly at higher frequencies. Bulk bias is designed for low-voltage supply through the first stage of amplification. The LNA showed the maximum S21 of 19.5 dB. The minimum noise figure was 2.9 dB with 1 V supply voltage.
Keywords :
CMOS analogue integrated circuits; field effect MMIC; low noise amplifiers; microwave amplifiers; ultra wideband communication; CMOS technology; UWB CG LNA; UWB common gate LNA; broadband input matching; bulk-bias method; common gate configuration; frequency 3 GHz to 8 GHz; low noise amplifier; size 0.18 mum; ultra-wideband application; voltage 1 V; CMOS integrated circuits; Gain; Impedance; Impedance matching; Logic gates; Noise; Power demand;
Conference_Titel :
Information Science and Technology (ICIST), 2013 International Conference on
Conference_Location :
Yangzhou
Print_ISBN :
978-1-4673-5137-9
DOI :
10.1109/ICIST.2013.6747749
