DocumentCode
3385435
Title
Transmission characteristics study of memristors based Op-Amp circuits
Author
Yu, Qin ; Qin, Zhiguang ; Yu, Juebang ; Mao, Yuming
Author_Institution
Sch. of Commun. & Inf. Eng., Univ. of Electron. Sci. & Technol., Chengdu, China
fYear
2009
fDate
23-25 July 2009
Firstpage
974
Lastpage
977
Abstract
According to a physical memristor fabricated by nano technology, a monotone-increasing and piecewise-linear nonlinear memristor model is applied to study the transmission characteristics of memristors based inverting and noninverting op-amp circuits. Simulation results demonstrated that inverting amplification and noninverting amplification can be obtained in the memristor based op-amp circuits.
Keywords
micromechanical devices; operational amplifiers; resistors; inverting amplification; memristors based op-amp circuits; nanotechnology; noninverting amplification; piecewise-linear nonlinear memristor model; transmission characteristics study; Application software; Circuits; Computer science; Impedance; Memristors; Operational amplifiers; Piecewise linear techniques; Resistors; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location
Milpitas, CA
Print_ISBN
978-1-4244-4886-9
Electronic_ISBN
978-1-4244-4888-3
Type
conf
DOI
10.1109/ICCCAS.2009.5250356
Filename
5250356
Link To Document