Internal operating mechanisms of OEIC-compatible lateral injection lasers: Intrinsic differences from the vertical injection paradigm

Author

Sargent, Edward H. ; Tan, G.L. ; Suda, D.A. ; Xu, J.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

111

Lastpage

112

Abstract

Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.

Keywords

finite element analysis; integrated optoelectronics; laser theory; semiconductor device models; semiconductor lasers; 2D finite element light emitter simulator; OEIC-compatible lateral injection lasers; design methodologies; internal operating mechanisms; lateral injection semiconductor lasers; local gain profile; monolithic optoelectronic integration; p-i-n active region; self-consistent numerical modeling; semi-insulating substrate; Charge carrier processes; Chirp modulation; Laser modes; Optical design; PIN photodiodes; Performance gain; Poisson equations; Semiconductor lasers; Substrates; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553772

Filename

553772