Title :
Internal operating mechanisms of OEIC-compatible lateral injection lasers: Intrinsic differences from the vertical injection paradigm
Author :
Sargent, Edward H. ; Tan, G.L. ; Suda, D.A. ; Xu, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.
Keywords :
finite element analysis; integrated optoelectronics; laser theory; semiconductor device models; semiconductor lasers; 2D finite element light emitter simulator; OEIC-compatible lateral injection lasers; design methodologies; internal operating mechanisms; lateral injection semiconductor lasers; local gain profile; monolithic optoelectronic integration; p-i-n active region; self-consistent numerical modeling; semi-insulating substrate; Charge carrier processes; Chirp modulation; Laser modes; Optical design; PIN photodiodes; Performance gain; Poisson equations; Semiconductor lasers; Substrates; Surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553772
