Defect suppression from the compound semiconductor heterointerfaces

Author

Kalem, S. ; Curtis, A. ; Hartmann, Q.J. ; Thomas, S. ; Turnbull, D. ; Chuang, H. ; Bishop, S.G. ; Stillman, G.E.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

500

Lastpage

503

Abstract

We report on the effect of inserting ultra-thin InAs layers at the heterointerfaces on physical properties of GaAs/InGaP on GaAs and InP/GaAs on InP grown by MOCVD and MOMBE, respectively. It is shown that the insertion of ultra thin InAs layers at the heterostructure interfaces has a significant effect in eliminating defects from the interfaces

Keywords

III-V semiconductors; crystal defects; gallium arsenide; gallium compounds; indium compounds; interface structure; semiconductor heterojunctions; GaAs; GaAs-InAs-InGaP; GaAs/InGaP; InP; InP-InAs-GaAs; InP/GaAs; MOCVD; MOMBE; compound semiconductor heterointerfaces; defect suppression; defects; heterointerfaces; heterostructure interface; physical properties; ultra thin InAs layers; ultra-thin InAs layers; Gallium arsenide; Indium phosphide; Laboratories; Lattices; MOCVD; Microelectronics; Optical buffering; Physics; Semiconductor impurities; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492292

Filename

492292