Title :
Growth of ternary and quaternary compounds on non-planar InP substrates
Author :
Mullan, CA ; Robinson, B.J. ; Thompson, D.A. ; Weatherly, G.C.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
We have previously shown how InP, InGaAs and InGaAsP deposited onto etched DFB gratings under the same conditions act differently and here we will show both how the atomic concentrations change in deposited InGaAs and InGaAsP layers with position above the grating and how the total incorporation rate changes when compared to growth on a planar substrate
Keywords :
III-V semiconductors; chemical beam epitaxial growth; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; InGaAs; InGaAsP; InP; atomic concentrations; etched DFB gratings; gas source MBE; grating; nonplanar InP substrates; planar substrate; quaternary compounds; ternary compounds; total incorporation rate; Atomic layer deposition; Crystalline materials; Diffraction; Distributed feedback devices; Gratings; Indium phosphide; Optical materials; Phase change materials; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492296
