• DocumentCode
    3385700
  • Title

    A 3D RRAM using stackable 1TXR memory cell for high density application

  • Author

    Zhang, Ji ; Ding, Yiqing ; Xue, Xiaoyong ; Gang Jin ; Wu, Yuxin ; Xie, Yufeng ; Lin, Yinyin

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2009
  • fDate
    23-25 July 2009
  • Firstpage
    917
  • Lastpage
    920
  • Abstract
    This paper reports a novel 3D RRAM concept using stackable multi-layer 1TXR memory cell structure for future high density application. Using an 8-layer metal of stacked 1TXR (X = 64) as an example, the density is over 260% higher than that of the conventional single layer 1T1R structure. Corresponding operation algorithm is put forward for the first time, which can inhibit mis-write and mis-read caused by sneaking current and reduce power consumption.
  • Keywords
    random-access storage; 3D RRAM concept; resistive random access memory; stackable 1TXR memory cell structure; Diodes; Electrodes; Energy consumption; Equivalent circuits; Microelectronics; Random access memory; Resistors; Scalability; Silicon; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
  • Conference_Location
    Milpitas, CA
  • Print_ISBN
    978-1-4244-4886-9
  • Electronic_ISBN
    978-1-4244-4888-3
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2009.5250369
  • Filename
    5250369