Title :
Device quality InGaAs/InAlAs/InP heterostructures grown by gas source molecular beam epitaxy
Author :
Chen, J.X. ; Li, A.Z. ; Zhang, Y.G. ; Ren, Y.C. ; Qi, M.
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
In this paper, we report the growth of device quality InGaAs/InAlAs/InP materials by gas source molecular beam epitaxy (GSMBE) and their applications to HEMTs and MSM-PDs. Larger conduction band discontinuity and larger electron mobility which led to improved electrical performance of HEMT materials and devices can be obtained by adoption of dual strained InGaAs channel layer and InAlAs Schottky layer
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; chemical beam epitaxial growth; conduction bands; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; interface states; metal-semiconductor-metal structures; photodetectors; semiconductor growth; semiconductor heterojunctions; GSMBE; HEMT; InAlAs Schottky layer; InGaAs-InAlAs-InP; MSM-PD; conduction band discontinuity; device quality InGaAs/InAlAs/InP heterostructures; dual strained InGaAs channel layer; electrical performance; electron mobility; gas source molecular beam epitaxy; growth; metal-semiconductor-metal photodetectors; Cutoff frequency; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Substrates; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492299
