Title :
The influence of copper contamination on gate oxide integrity
Author :
Vermeire, B. ; Parks, H.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
It is shown that low levels of copper contamination present on pre-oxidation silicon surfaces significantly affect not only the area, but also the field overlap defect density of the gate oxide. The gate oxide yield loss associated with the field overlap defects will dominate in circuits with device dimensions below 10 μm
Keywords :
copper; elemental semiconductors; oxidation; silicon; surface contamination; 10 micron; Cu; Si; area; copper contamination; field overlap defect density; gate oxide integrity; silicon surface; yield; Atomic measurements; Breakdown voltage; Capacitors; Copper; MOS devices; Oxidation; Poisson equations; Pollution measurement; Silicon; Surface contamination;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-4050-7
DOI :
10.1109/ASMC.1997.630700
