An unified GSMBE growth model for GaInAsP on InP and GaAs

A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k_In and k_Ga, which are determined from the experimental results of In_1-xGa_xAs_yP_1-y on InP (0<x<0.47 and 0<y<1) and In_1-xGa_xAs _yP_1-y on GaAs (0.51<x<1 and 0<y<1). At a growth temperature of 480°C, they are 27.5 and 2.75, respectively. Their temperature dependency, i.e., activation energies are -27.5 and -457 meV, respectively. The average lattice mismatch difference between the theoretical and experimental results of grown epilayers is less than 7×10^-4