Title :
Design and CBE growth of strain-balanced InAsP/GaInP short-period superlattice for long-wavelength MQB
Author :
Loh, T.H. ; Miyamoto, T. ; Takada, T. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
A strain-balanced InAsP/InP/GaInP short-period superlattice with period of 15 monolayer with 2% compressive well and 2% tensile barrier strain has been grown by CBE with 1 monolayer InP as intermediate layer. A superlattice with uninterrupted flow of TMIn and PH3 at the well-barrier interfaces gave the best results. When the superlattice is grown at the p-side of an InP p-n homojunction, the turn-on voltage due to the superlattice was 0.3 V. It has been estimated that a laser diode loaded with such a superlattice at the p-side should have an operating current density not more than 3.3 kA/cm2
Keywords :
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; gallium compounds; indium compounds; internal stresses; monolayers; p-n junctions; photoluminescence; semiconductor growth; semiconductor lasers; semiconductor superlattices; 0.3 V; CBE growth; InAsP-GaInP; InAsP-InP-GaInP; InP pn homojunction; PH3; XRD; compressive well strain; current density; design; intermediate layer; laser diode; long-wavelength MQB; monolayer; multi-quantum barriers; photoluminescence; strain-balanced InAsP/GaInP short-period superlattice; tensile barrier strain; turn-on voltage; uninterrupted flow; well-barrier interfaces; DH-HEMTs; Diode lasers; Electrons; Gallium arsenide; Indium phosphide; Laboratories; Superlattices; Temperature; Tensile strain; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492303
