• DocumentCode
    3385811
  • Title

    A Nanowire Array for Reconfigurable Computing

  • Author

    Beckett, Paul

  • Author_Institution
    Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC
  • fYear
    2005
  • fDate
    21-24 Nov. 2005
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    A fine-grained reconfigurable array based on complementary, dual-gate, fully depleted, silicon on insulator (DGFD-SOI) nanowire transistors is proposed and analyzed. Both low power and reconfigurable operation may be achieved by altering the switching threshold of the array using the back-gate bias on the complementary double-gate transistors. Simulated performance figures are presented for the array when configured into representative circuits and compared with two similar self-assembled molecular arrays. It is shown that SOI nanowire arrays can achieve dense, low-power reconfigurable operation without the overheads of either level restoration or additional gain blocks that may be required by molecular-based systems.
  • Keywords
    logic design; nanowires; reconfigurable architectures; silicon-on-insulator; transistors; back-gate bias; complementary double-gate transistors; fine-grained reconfigurable array; molecular-based systems; nanowire array; reconfigurable computing; silicon on insulator nanowire transistors; CMOS technology; Fabrication; Integrated circuit interconnections; Logic devices; Manufacturing; Nanoscale devices; Power engineering and energy; Power engineering computing; Silicon on insulator technology; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2005 2005 IEEE Region 10
  • Conference_Location
    Melbourne, Qld.
  • Print_ISBN
    0-7803-9311-2
  • Electronic_ISBN
    0-7803-9312-0
  • Type

    conf

  • DOI
    10.1109/TENCON.2005.301252
  • Filename
    4085362