A novel current reuse wideband amplifier using 130 nm Si CMOS technology for 22 – 29 GHz applications

Author

Liu, Q. ; Sun, J. ; Suh, Y.J. ; Kurachi, S. ; Itoh, N. ; Yoshimasu, T.

Author_Institution

Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan

fYear

2009

fDate

23-25 July 2009

Firstpage

807

Lastpage

809

Abstract

In this paper, a novel wideband amplifier is proposed for 22-29 GHz UWB applications in 0.13 mum Si CMOS technology. In order to reduce the dc current of the amplifier, a novel current reuse technique is adopted in a cascode CMOS transistor. In addition, a low-pass type feedback circuit for the first stage and an inductive feedback circuit for the second stage are designed to make the bandwidth wider. It is expected that the wideband amplifier exhibits a gain of 11.3 dB +/-1.2 dB with a dc power consumption as low as 9.8 mW.

Keywords

CMOS integrated circuits; circuit feedback; elemental semiconductors; microwave amplifiers; microwave integrated circuits; microwave transistors; silicon; ultra wideband technology; wideband amplifiers; CMOS technology; Si; UWB applications; cascode CMOS transistor; frequency 22 GHz to 29 GHz; inductive feedback circuit; low-pass type feedback circuit; size 130 nm; wideband amplifier; Broadband amplifiers; CMOS technology; Chaos; Circuit analysis; Circuit simulation; Equations; Laboratories; Memristors; Passive circuits; Virtual colonoscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on

Conference_Location

Milpitas, CA

Print_ISBN

978-1-4244-4886-9

Electronic_ISBN

978-1-4244-4888-3

Type

conf

DOI

10.1109/ICCCAS.2009.5250377

Filename

5250377