Title :
A novel current reuse wideband amplifier using 130 nm Si CMOS technology for 22 – 29 GHz applications
Author :
Liu, Q. ; Sun, J. ; Suh, Y.J. ; Kurachi, S. ; Itoh, N. ; Yoshimasu, T.
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
Abstract :
In this paper, a novel wideband amplifier is proposed for 22-29 GHz UWB applications in 0.13 mum Si CMOS technology. In order to reduce the dc current of the amplifier, a novel current reuse technique is adopted in a cascode CMOS transistor. In addition, a low-pass type feedback circuit for the first stage and an inductive feedback circuit for the second stage are designed to make the bandwidth wider. It is expected that the wideband amplifier exhibits a gain of 11.3 dB +/-1.2 dB with a dc power consumption as low as 9.8 mW.
Keywords :
CMOS integrated circuits; circuit feedback; elemental semiconductors; microwave amplifiers; microwave integrated circuits; microwave transistors; silicon; ultra wideband technology; wideband amplifiers; CMOS technology; Si; UWB applications; cascode CMOS transistor; frequency 22 GHz to 29 GHz; inductive feedback circuit; low-pass type feedback circuit; size 130 nm; wideband amplifier; Broadband amplifiers; CMOS technology; Chaos; Circuit analysis; Circuit simulation; Equations; Laboratories; Memristors; Passive circuits; Virtual colonoscopy;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250377
