DocumentCode
3386031
Title
Photoreflectance study of surface Fermi level of InAlAs after sulphidation
Author
Baltagi, Y. ; Bru-Chevallier, C. ; Guillot, G. ; Leclercq, J.L.
Author_Institution
Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees de Lyon, Villeurbanne, France
fYear
1996
fDate
21-25 Apr 1996
Firstpage
582
Lastpage
585
Abstract
The aim of the present study is to study by the photoreflectance (PR) technique, the influence of sulphidation treatments, which have been successfully applied to the passivation of GaAs surfaces, on the Fermi level pinning of InAlAs. It is of considerable interest since it can give contactless surface Fermi level position through the exploitation of Franz Keldysh oscillations
Keywords
Fermi level; III-V semiconductors; aluminium compounds; indium compounds; passivation; photoreflectance; reflectivity; surface states; surface treatment; Fermi level pinning; Franz Keldysh oscillations; InAlAs; S; contactless surface Fermi level position; passivation; photoreflectance study; sulphidation; sulphidation treatment; surface Fermi level; Doping; Etching; Fabrication; Gallium arsenide; Indium compounds; Laser beams; Laser excitation; Passivation; Surface treatment; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492315
Filename
492315
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