Title :
Low temperature direct wafer bonding of silicon using a glass intermediate layer
Author :
Dragoi, V. ; Alexe, M. ; Reiche, M. ; Gösele, U.
Author_Institution :
Max Planck of Microstruct. Phys., Halle, Germany
Abstract :
Low temperature wafer bonding is desirable to bond processed wafers or dissimilar materials. The present paper proposes a low temperature silicon-to-silicon bonding process using a spin-on glass as intermediate layer. The interface bonding energy after annealing at 200°C is about 2.3 J/m2 and proved to be sufficient to allow further mechanical processing
Keywords :
annealing; elemental semiconductors; silicon; wafer bonding; 200 degC; Si; Si-Si bonding; annealing; direct wafer bonding; glass intermediate layer; interface bonding energy; mechanical processing; spin-on glass; Annealing; Bonding processes; Elementary particle vacuum; Glass; Semiconductor materials; Silicon; Temperature; Thermal decomposition; Thermal stresses; Wafer bonding;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810582
