Title :
Built-in current sensor for IDDQ testing in deep submicron CMOS
Author :
Calin, T. ; Anghel, L. ; Nicolaidis, M.
Author_Institution :
TIMA, Grenoble, France
Abstract :
This paper describes results on Built-In Current Sensors (BICS) destined to overcome the limitations of IDDQ testing in deep submicron circuits. The problems of performance penalty, test accuracy and test speed are addressed. A new sensor composed of a source-controlled comparator operating at low supply voltages and bias currents is used. Gradual sensor activation ensures reliable low noise operation. It is combined with large bypass MOS switches avoiding performance penalty, as well as a second bypass and compensation logic to increase test speed
Keywords :
CMOS digital integrated circuits; VLSI; built-in self test; current comparators; electric current measurement; electric sensing devices; integrated circuit noise; integrated circuit testing; leakage currents; low-power electronics; IDDQ testing; built-in current sensor; compensation logic; deep submicron CMOS; large bypass MOS switches; low bias currents; low supply voltages; performance penalty; reliable low noise operation; source-controlled comparator; test accuracy; test speed; CMOS image sensors; CMOS technology; Circuit faults; Circuit testing; Image sensors; Logic testing; Low voltage; Semiconductor device modeling; Subthreshold current; Threshold voltage;
Conference_Titel :
VLSI Test Symposium, 1999. Proceedings. 17th IEEE
Conference_Location :
Dana Point, CA
Print_ISBN :
0-7695-0146-X
DOI :
10.1109/VTEST.1999.766657
