• DocumentCode
    3386122
  • Title

    Improvement of the sensitivity by UV light in alcohol sensors using porous silicon layer

  • Author

    Kim, Seong-Jeen ; Jeon, Byung-Hyun ; Choi, Kyu-Seong

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Kyungnam Univ., Masan, South Korea
  • Volume
    2
  • fYear
    1999
  • fDate
    36434
  • Firstpage
    475
  • Abstract
    A capacitance-type alcohol gas sensor using porous silicon as a sensitive layer is developed to measure low alcohol concentration at room temperature. Although the sensor using porous silicon layer shows some sensitivity at room temperature by large internal surface area, but there is still much room for improvement. In this work, we measured the variation of capacitance of the sensor under illumination of 254 nm UV light. As the result, the increase in the slope was observed, and it is supposed that UV light activates the response of the oriental polarization which has a slow relaxation time for AC field
  • Keywords
    capacitive sensors; elemental semiconductors; gas sensors; organic compounds; porous semiconductors; silicon; ultraviolet radiation effects; 254 nm; Si; UV light irradiation; alcohol gas sensor; capacitance; concentration measurement; internal surface area; porous silicon layer; sensitivity; Capacitance measurement; Capacitive sensors; Chemical sensors; Chemical technology; Electric variables measurement; Ethanol; Gas detectors; Lighting; Silicon; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810588
  • Filename
    810588