Title :
Preliminary characterization of PbS/Si3N4/Si structure to be used in IR-field effect enhanced photoconductive devices (IR-FEEPD)
Author :
Botila, T. ; Pentia, E. ; Pintilie, L. ; Tivarus, C. ; Pintilie, I.
Author_Institution :
Nat. Inst. if Mater. Phys., Bucharest, Romania
Abstract :
PbS thin films were deposited on the Si3N4/Si substrates. The electric properties of the sandwich structure, before and after PbS deposition, were investigated using C-V and I-V measurements. It was found that an anomalously high leakage current occurs through the structure after PbS deposition
Keywords :
IV-VI semiconductors; lead compounds; photoconducting devices; semiconductor thin films; semiconductor-insulator-semiconductor devices; C-V characteristics; I-V characteristics; IR-FEEPD; IR-field effect enhanced photoconductive device; PbS thin film; PbS-Si3N4-Si; PbS/Si3N4/Si sandwich structure; Si3N4/Si substrate; electrical properties; leakage current; Capacitance-voltage characteristics; Dielectric measurements; Electrodes; Ferroelectric films; Lead; Photoconducting devices; Photoconducting materials; Sputtering; Substrates; Voltage;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810597
