Large-signal HEMT modelling, specifically optimized for InP based HEMTs

Author

Schreurs, D. ; Baeyens, Y. ; van der Zanden, K. ; Verspecht, J. ; Van Hove, M. ; De Raedt, W. ; Nauwelaers, B. ; Van Rossum, M.

Author_Institution

ESAT, Katholieke Univ., Leuven, Heverlee, Belgium

fYear

1996

fDate

21-25 Apr 1996

Firstpage

638

Lastpage

641

Abstract

InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits. This clarifies why recently much attention is paid to non-linear HEMT modelling. The existing non-linear HEMT models, however, are elaborated for HEMTs in general and do not address explicitly the specific properties appropriate to InP based HEMTs. This paper summarizes the problem areas inherent to InP based HEMTs that are encountered with the most common non-linear model generation procedure. Adequate solutions to overcome these problems are successfully implemented in a large-signal table based model

Keywords

III-V semiconductors; equivalent circuits; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; InP; InP based HEMTs; large-signal HEMT modelling; large-signal table based model; nonlinear HEMT modelling; nonlinear model generation procedure; Circuits; FETs; Gallium arsenide; HEMTs; Indium phosphide; Intrusion detection; MMICs; Scattering parameters; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492330

Filename

492330