A through-silicon-via (TSV) shunt-grounded conductor backed ring resonator

Miniaturization of communication devices has initiated towards the integration of passive and active radio frequency devices on the single chip in order to reduce the size and cost of the systems. Recent advancement in three-dimensional fabrication technologies in conventional CMOS process is leading to a system-on-chip integration in which RF devices are among the candidates to be integrated. Microwave resonators are indispensable parts of the modern communication devices. In this paper, we present a ring resonator with shunt grounded ring using through-silicon-via (TSV) technology. Full wave electromagnetic wave simulation results indicate the shift in the resonant frequency of the shunt grounded ring resonator structure. The self inductance of the through-silicon vias contributes to the impedance of the ring structure thereby changing the resonant frequency of the resonator. The resonant frequency of the device with no through-silicon via is designed to be 10 GHz. The shift in resonance frequency by 0.1 GHz is observed in full wave electromagnetic simulation. By introducing the through-silicon vias into the ring resonator structure, the resonant frequency of the structure can be modified. The inductance of individual through-silicon via copper pillars is calculated with electromagnetic simulation. The present result may open a new RF passive device architecture where planar devices are dominating previously.