Title :
Silicon membranes manufactured by electrochemical etch stop technique
Author :
Obreja, Paula ; Muller, Raluca ; Ghita, Mihaela
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
The paper presents silicon anisotropic etching experiments in KOH and TMAH solutions using the electrochemical etch-stop technique to control the thickness of silicon membranes. Under the best conditions (10% KOH, 80°C), silicon membranes with 6-10 μm thickness and a roughness of less than tens of nm were obtained
Keywords :
elemental semiconductors; etching; membranes; micromachining; passivation; silicon; voltammetry (chemical analysis); 3D microstructures; 6 to 10 micron; 80 C; Si; anisotropic etching; anodic peak current; cyclic voltammetry; electrochemical etch-stop technique; membrane thickness control; micromachining; p-n etch stop; passivation potential; roughness; Biomembranes; Electrodes; Electrons; Etching; Manufacturing; P-n junctions; Passivation; Silicon; Temperature; Thickness control;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810602
