Title :
SiGe BiCMOS X-Band integrated radiometer
Author :
Ducati, F. ; Mazzanti, A. ; Borgarino, M. ; Pifferi, M.
Author_Institution :
Dept. of Inf. Eng., Univ. of Modena & Reggio Emilia, Modena
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
The present paper reports on the design in a 0.35. mum SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5 mm2, dissipated about 0.5 W, and is able to detect a signal as low as -90 dBm up to 10 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; radiometers; semiconductor materials; BiCMOS x-band integrated radiometer; SiGe; frequency 8 GHz to 10 GHz; monolithic RF front-end; power 0.5 W; size 0.35 mum; BiCMOS integrated circuits; Costs; Fabrication; Germanium silicon alloys; Paper technology; Prototypes; Radio frequency; Radiometry; Silicon germanium; Testing;
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4675088
