Title :
Reliable, high gain-bandwidth product InGaAs/InP avalanche photodiodes for 10 Gb/s receivers
Author :
Clark, W.R. ; Margittai, A. ; Noel, J.-P. ; Jatar, S. ; Kim, H. ; Jamroz, E. ; Knight, G. ; Thomas, D.
Author_Institution :
Adv. Technol. Lab., Nepean, Ont., Canada
Abstract :
InGaAs/InP avalanche photodiodes (APDs) with gain-bandwidth products as high as 140 GHz, low effective ionization rate ratio and excellent reliability were fabricated. Receivers using these APDs had sensitivities better than -27.5 dBm.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; semiconductor device reliability; 10 Gbit/s; InGaAs-InP; InGaAs/InP avalanche photodiode; gain-bandwidth product; ionization rate ratio; optical receiver; reliability; sensitivity; Absorption; Avalanche photodiodes; Bandwidth; Fabrication; Gold; Indium gallium arsenide; Indium phosphide; Optical design; Optical receivers; Substrates;
Conference_Titel :
Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest
Conference_Location :
San Diego, CA, USA
Print_ISBN :
1-55752-582-X
DOI :
10.1109/OFC.1999.767804
