DocumentCode :
3386551
Title :
A practical methodology for multi-modality electromigration lifetime prediction
Author :
Lin, M.H. ; Yang, G.S. ; Lin, Y.L. ; Lin, M.T. ; Lin, C.C. ; Yeh, M.-S. ; Chang, K.P. ; Su, K.C. ; Chen, J.K. ; Chang, Y.J. ; Wang, Tahui
Author_Institution :
United Microelectron. Corp., Hsin-Chu, Taiwan
fYear :
2002
fDate :
21-24 Oct. 2002
Firstpage :
50
Lastpage :
54
Abstract :
Multiple electromigration failure mechanism was observed in advanced dual damascene Cu interconnects. The complex failure behaviors make precision lifetime prediction more challenging. In the present work, multi-modality electromigration behavior of Cu dual damascene interconnects were studied. Both superposition and weak link models were used for statistical determination of lifetimes of each failure model (statistical method). Results were correlated to the lifetimes of respective failure models physically identified according to resistance time evolution behaviors (Physical method). Good agreement was achieved.
Keywords :
electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; statistical analysis; dual damascene Cu interconnects; electromigration lifetime prediction; failure behaviors; multi-modality electromigration; resistance time evolution behaviors; statistical determination; statistical method; superposition; weak link models; Copper; Degradation; Dielectrics; Electromigration; Failure analysis; Integrated circuit interconnections; Log-normal distribution; Packaging; Testing; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
Type :
conf
DOI :
10.1109/IRWS.2002.1194232
Filename :
1194232
Link To Document :
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