DocumentCode
3386564
Title
A 1.5V four phase switched polarity charge pump
Author
Huang, Mengshu ; Okamura, Leona ; Wang, Yuzhe ; Yoshihara, Tsutomu
Author_Institution
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
fYear
2009
fDate
23-25 July 2009
Firstpage
688
Lastpage
692
Abstract
A four phase switched polarity charge pump using 0.13 mum triple well CMOS technology is presented. The architecture takes advantage of the threshold voltage cancellation scheme in the conventional four phase Dickson charge pump. With the body control technique, the body effect is eliminated. The charge transfer unit is shared in positive and negative operation, which makes the design more compact. Simulation results show that the proposed 5-stage charge pump can reach +8.22 V/-8.05 V (ideal: +9 V/-9 V) with 10% of total capacitance as estimated parastics, and the output indicates good linearity with respect to the increase of stages.
Keywords
CMOS integrated circuits; charge pump circuits; switched networks; body control technique; charge transfer; four-phase switched polarity charge pump; size 0.13 mum; triple well CMOS technology; voltage 1.5 V; voltage cancellation scheme; CMOS technology; Capacitance; Charge pumps; Charge transfer; Circuit simulation; Linearity; MOSFETs; Switches; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location
Milpitas, CA
Print_ISBN
978-1-4244-4886-9
Electronic_ISBN
978-1-4244-4888-3
Type
conf
DOI
10.1109/ICCCAS.2009.5250412
Filename
5250412
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