• DocumentCode
    3386564
  • Title

    A 1.5V four phase switched polarity charge pump

  • Author

    Huang, Mengshu ; Okamura, Leona ; Wang, Yuzhe ; Yoshihara, Tsutomu

  • Author_Institution
    Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
  • fYear
    2009
  • fDate
    23-25 July 2009
  • Firstpage
    688
  • Lastpage
    692
  • Abstract
    A four phase switched polarity charge pump using 0.13 mum triple well CMOS technology is presented. The architecture takes advantage of the threshold voltage cancellation scheme in the conventional four phase Dickson charge pump. With the body control technique, the body effect is eliminated. The charge transfer unit is shared in positive and negative operation, which makes the design more compact. Simulation results show that the proposed 5-stage charge pump can reach +8.22 V/-8.05 V (ideal: +9 V/-9 V) with 10% of total capacitance as estimated parastics, and the output indicates good linearity with respect to the increase of stages.
  • Keywords
    CMOS integrated circuits; charge pump circuits; switched networks; body control technique; charge transfer; four-phase switched polarity charge pump; size 0.13 mum; triple well CMOS technology; voltage 1.5 V; voltage cancellation scheme; CMOS technology; Capacitance; Charge pumps; Charge transfer; Circuit simulation; Linearity; MOSFETs; Switches; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
  • Conference_Location
    Milpitas, CA
  • Print_ISBN
    978-1-4244-4886-9
  • Electronic_ISBN
    978-1-4244-4888-3
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2009.5250412
  • Filename
    5250412