• DocumentCode
    3386585
  • Title

    Effect of reduced current density stress on the results of isothermal electromigration test for Cu single damascene line

  • Author

    Leong, Kin ; Andrew, Yap ; Lim, Bee Hoon

  • Author_Institution
    Chartered Semicond. Manuf., Singapore, Singapore
  • fYear
    2002
  • fDate
    21-24 Oct. 2002
  • Firstpage
    62
  • Lastpage
    66
  • Abstract
    Isothermal (ISOT) EM tests offer a fast method to evaluate metal EM degradation rate and reduced total test cycle times and costs. As in any highly accelerated testing, "overstressing" is a concern and should be avoided. In this work, we reduced the stress current density required, to achieve the desired self-heating by raising the temperature of the hot chuck. Comparison of various aspects of ISOT results on Cu single damascene lines such as resistance degradation profile, activation energy, and physical failure modes are presented. There is no significant change in these aspects due to reduced current density stress, which suggests no evidence that "over-stress" has occurred.
  • Keywords
    current density; electromigration; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; Cu; EM degradation rate; ISOT; activation energy; current density stress; highly accelerated testing; hot chuck; isothermal electromigration test; physical failure modes; resistance degradation profile; self-heating; single damascene line; total test cycle times; Circuit testing; Costs; Current density; Degradation; Electromigration; Isothermal processes; Packaging; Stress; Temperature; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2002. IEEE International
  • Print_ISBN
    0-7803-7558-0
  • Type

    conf

  • DOI
    10.1109/IRWS.2002.1194234
  • Filename
    1194234