Title :
Fast and reliable WLR monitoring methodology for assessing thick dielectrics test structures integrated in the kerf of product wafers
Author :
Martin, Andreas ; Von Hagen, Jochen ; Fazekas, Josef ; Allers, K.-H.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
In this work the optimisation of an in-line stress for thick dielectric layers, SMU set up, tester equipment and layout of test structures for fast WLR Monitoring is described. It is shown that a current ramp is the optimum solution to avoid any influence on adjacent chips from the stress, large melted areas of the test structures and/or the melting of the interconnect to the structure. The work focuses on Metal-Insulator-Metal capacitors, but similar observations can be also obtained from thick MOS gate oxides.
Keywords :
MIM devices; capacitors; dielectric measurement; monitoring; semiconductor device reliability; semiconductor device testing; MOS gate oxide; SMU unit; in-line stress optimisation; metal-insulator-metal capacitor; product wafer kerf; ramped current stress; test structure; tester equipment; thick dielectric layer; wafer-level reliability monitoring; Circuits; Dielectric breakdown; Dielectric measurements; Electric breakdown; MIM capacitors; Metal-insulator structures; Monitoring; Stress; Testing; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
DOI :
10.1109/IRWS.2002.1194239