Title :
Direct correlation of electrical reliability data to SEM analysis for deep trench dielectric weakness
Author :
Wühn, Mario ; Diestel, Gunnar ; Obry, Meinhard
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The dielectric reliability of DRAM deep trenches was evaluated by means of accelerated lifetime tests. It has been demonstrated, that the results of the statistical analysis are very sensitive to process differences. In order to identify those deviations, systematic electrical tests (TDDB, IV, CV sweeps) in combination with failure analyses (SEM) were performed. A direct correlation of poor reliability results and shape deformations of the deep trench bottom was demonstrated.
Keywords :
DRAM chips; electric breakdown; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; scanning electron microscopy; C-V characteristics; DRAM deep trench; I-V characteristics; SEM analysis; accelerated lifetime testing; dielectric reliability; electrical testing; failure analysis; shape deformation; statistical analysis; time dependent dielectric breakdown; Data analysis; Dielectrics; Failure analysis; Life estimation; Lifetime estimation; Performance evaluation; Random access memory; Shape; Statistical analysis; System testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
DOI :
10.1109/IRWS.2002.1194240
