Polarity dependent reliability of advanced MOSFET using MOCVD nitrided Hf-silicate high-k gate dielectric

Author

Zhang, J. ; Zhao, E. ; Xiang, Q. ; Chan, J. ; Jeon, J. ; Goo, J.-S. ; Marathe, A. ; Ogle, B. ; Lin, M.R. ; Taylor, K.

Author_Institution

Technol. Dev. Group, AMD, Sunnyvale, CA, USA

fYear

2002

fDate

21-24 Oct. 2002

Firstpage

92

Lastpage

95

Abstract

We report reliability of MOSFETs with MOCVD nitrided Hf-silicate (HfSiON) high-k gate dielectric. HfSiON has shown superior electrical characteristics, such as low leakage relative to SiO₂ and high mobility compared to other high-k gate dielectrics. SILC is found to be comparable to SiO₂ and better than Hf-silicate without nitridation. TDDB and BTI reveal significant difference between inversion and accumulation mode. Polarity-dependent charge trapping and defect generation are observed and attributed to asymmetric band diagram as well as dissimilar charging processes in two stress modes. Trap-assisted tunneling is evidenced by its strong temperature dependence. Charge pumping tests indicate higher interface density compared to SiO₂/Si. The Weibull slope is determined to be about 3, showing robust wear-out quality of the high-k dielectric.

Keywords

MOCVD coatings; MOSFET; Weibull distribution; carrier mobility; dielectric thin films; electric breakdown; hafnium compounds; interface states; leakage currents; nitridation; semiconductor device reliability; tunnelling; BTI; Hf-silicate high-k gate dielectric; HfSiON; MOCVD; MOSFET; SILC; TDDB; Weibull slope; accumulation mode; band structure; carrier mobility; charge pumping; charge trapping; defect generation; electrical characteristics; interface state density; inversion mode; nitridation; polarity dependence; reliability; temperature dependence; trap-assisted tunneling; wear-out; Charge pumps; Electric variables; High-K gate dielectrics; MOCVD; MOSFET circuits; Robustness; Stress; Temperature dependence; Testing; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2002. IEEE International

Print_ISBN

0-7803-7558-0

Type

conf

DOI

10.1109/IRWS.2002.1194241

Filename

1194241