Title :
Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs
Author :
Zhao, Eugene-Xuejun ; Chan, Jay ; Zhang, John ; Marathe, Amit ; Taylor, Kurt
Author_Institution :
AMD, Sunnyvale, CA, USA
Abstract :
In this paper, we report hot-carrier behavior of sub-100 nm partially depleted SOI MOSFETs at room (25C) and high temperature (100C) under various stress conditions. It was observed that VG=VD was the worst case and more sensitive to temperature variation. SOI is more sensitive to operation temperature than bulk transistors. Hot carrier activation energy has also been extracted in the experiments.
Keywords :
MOSFET; hot carriers; silicon-on-insulator; 100 C; 100 nm; 25 C; activation energy; bias dependence; hot carrier characteristics; partially-depleted SOI MOSFET; temperature dependence; Charge pumps; Hot carriers; Human computer interaction; Interface states; MOSFETs; Silicon on insulator technology; Stress; Temperature dependence; Temperature sensors; Thermal degradation;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
DOI :
10.1109/IRWS.2002.1194245
