• DocumentCode
    3386825
  • Title

    Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs

  • Author

    Zhao, Eugene-Xuejun ; Chan, Jay ; Zhang, John ; Marathe, Amit ; Taylor, Kurt

  • Author_Institution
    AMD, Sunnyvale, CA, USA
  • fYear
    2002
  • fDate
    21-24 Oct. 2002
  • Firstpage
    113
  • Lastpage
    115
  • Abstract
    In this paper, we report hot-carrier behavior of sub-100 nm partially depleted SOI MOSFETs at room (25C) and high temperature (100C) under various stress conditions. It was observed that VG=VD was the worst case and more sensitive to temperature variation. SOI is more sensitive to operation temperature than bulk transistors. Hot carrier activation energy has also been extracted in the experiments.
  • Keywords
    MOSFET; hot carriers; silicon-on-insulator; 100 C; 100 nm; 25 C; activation energy; bias dependence; hot carrier characteristics; partially-depleted SOI MOSFET; temperature dependence; Charge pumps; Hot carriers; Human computer interaction; Interface states; MOSFETs; Silicon on insulator technology; Stress; Temperature dependence; Temperature sensors; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2002. IEEE International
  • Print_ISBN
    0-7803-7558-0
  • Type

    conf

  • DOI
    10.1109/IRWS.2002.1194245
  • Filename
    1194245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3386825