Hot carrier luminescence for backside 0.15 μm CMOS device analysis

Author

Ng, W. ; Gao, G. ; Abraham, A. ; Lundquist, T.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

2002

fDate

21-24 Oct. 2002

Firstpage

116

Lastpage

119

Abstract

Silicon avalanche photodiode (APD) and microchannel plate imaging (Mepsicron) detectors were utilized to perform circuit analysis through the silicon backside on a 0.15 μm CMOS test device. In addition to acquiring timing data on the device, the application also focused on several characteristics of hot carrier detection: 1) comparison of the use of APD and Mepsicron detectors, 2) sensitivity of hot carrier detection rate to operating voltage, 3) influence of capacitive load on hot carrier detection rate, and 4) correlation of emission pulse width with SPICE simulated fall time using a post-layout RC extracted netlist.

Keywords

CMOS integrated circuits; SPICE; avalanche photodiodes; electroluminescence; hot carriers; integrated circuit testing; microchannel plates; photodetectors; 0.15 micron; CMOS device testing; Mepsicron; PICA system; RC netlist; SPICE simulation; Si; avalanche photodiode detector; capacitive load; emission pulse width; fall time; hot carrier detection; hot carrier luminescence; microchannel plate imaging detector; silicon backside circuit analysis; timing characteristics; Avalanche photodiodes; CMOS image sensors; Circuit analysis; Circuit testing; Detectors; Hot carriers; Luminescence; Microchannel; Performance evaluation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2002. IEEE International

Print_ISBN

0-7803-7558-0

Type

conf

DOI

10.1109/IRWS.2002.1194246

Filename

1194246