Title :
Trench IGBT with carrier bypass region
Author :
Zehong Li ; Qian, Mengliang ; Ma, Rongyao ; Zhang, Bo ; Li, Zhaoji
Abstract :
A new trench IGBT with carrier bypass region is proposed in paper. In this new structure, P+ bypass regions are introduced, which provided hole carrier bypass, reduced the parasitic thyristor effect in the trench IGBT, allowed higher safe operating area. The results are shown that the temperature characteristic of the new trench IGBT is better than that of the conventional trench IGBT. The metal which contacts the bypass regions and the emitters helps the thermal dissipation at high temperature and reduces the emitter contact resistance.
Keywords :
insulated gate bipolar transistors; P+ bypass region; carrier bypass region; parasitic thyristor effect; thermal dissipation; trench IGBT; Bipolar transistors; Charge carrier processes; Contact resistance; Current density; Impedance; Insulated gate bipolar transistors; Temperature; Thermal resistance; Thyristors; Voltage;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250426
