DocumentCode
3386998
Title
An efficient physically-based MOSFET model for RF circuit design
Author
El-Sherif, A.Y. ; Ashley, K.L.
Author_Institution
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
Volume
2
fYear
1997
fDate
3-6 Aug. 1997
Firstpage
1075
Abstract
A physically-based non-quasi-static (NQS) MOSFET model has been derived to provide accurate response at high frequencies for deep-submicron devices and long-channel power devices. The model is valid over a wide range of device dimensions and different operating conditions. The model has been evaluated by the comparison of the 50-Ω S parameters obtained by using Berkeley SPICE3 with those measured experimentally.
Keywords
MOSFET; S-parameters; SPICE; UHF field effect transistors; semiconductor device models; 50 ohm; Berkeley SPICE3; RF circuit design; S parameters; UHF; deep-submicron devices; device dimensions; long-channel power devices; non-quasi-static model; operating conditions; physically-based MOSFET model; Circuit synthesis; Dielectric constant; Dielectric measurements; Equivalent circuits; MOSFET circuits; Power MOSFET; Radio frequency; Scattering parameters; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Print_ISBN
0-7803-3694-1
Type
conf
DOI
10.1109/MWSCAS.1997.662263
Filename
662263
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