Title :
A 90-nm Ka-band Dual-Injection-Locked CMOS Frequency Divider
Author :
Liu, Faen ; Wang, Zhigong ; Li, Qin ; Yang, Geliang
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
In this paper, a Ka-band Dual-Injection-Locked Frequency Divider (DILFD) using IBM 90-nm CMOS technology is proposed. The dual-injection-locked technique is used to extend the locking range of the frequency dividers based on resonator tank. The injection power is enhanced by fully utilizing the injection of the voltage and current signal. The post layout simulation results show that the locking range of the divide-by-two frequency divider is 7.1 GHz and the input signal frequency is from 30.1 GHz to 37.2 GHz. The whole core circuit draws a DC current of 5.64 mA from a single 1.2-V supply. The chip occupies a layout area of 622μm×585μm.
Keywords :
CMOS analogue integrated circuits; frequency dividers; millimetre wave circuits; CMOS technology; DC current; DILFD; Ka-band; dual-injection-locked CMOS frequency divider; dual-injection-locked technique; frequency 30.1 GHz to 37.2 GHz; wavelength 90 nm; CMOS integrated circuits; CMOS technology; Frequency conversion; Layout; Resonant frequency; Switching circuits; Transistors; COMS; Ka-band; dual-injection-locked; frequency divider; millimeter wave (MMW);
Conference_Titel :
Communication Technology (ICCT), 2011 IEEE 13th International Conference on
Conference_Location :
Jinan
Print_ISBN :
978-1-61284-306-3
DOI :
10.1109/ICCT.2011.6157882
