DocumentCode
3387065
Title
Design of a 2.2 GHz high efficiency GaN HEMT inverse class E transmission-line power amplifier
Author
He, Jin ; Ren, Dehao
Author_Institution
Chengdu Univ. of Inf. Technol., Chengdu, China
fYear
2009
fDate
23-25 July 2009
Firstpage
746
Lastpage
748
Abstract
This paper reports on the design and measurements of an inverse class E transmission-line power amplifier using a newly fabricated GaN HEMT device, NTPB0025. This amplifier was designed according to the inverse class E lumped prototype using load-pull optimizations. After that, the lumped amplifier was transformed to a transmission-line realization. The drain efficiency of 64%, PAE of 57.7%, and the output power of 41.5 dBm were measured at 2.2 GHz.
Keywords
HEMT integrated circuits; UHF power amplifiers; circuit optimisation; gallium compounds; transmission lines; GaN; HEMT inverse class E transmission-line power amplifier; amplifier design; frequency 2.2 GHz; inverse class E lumped prototype; load-pull optimizations; Doping; Etching; Gallium nitride; HEMTs; High power amplifiers; Ion implantation; Stability; Temperature; Thin film transistors; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location
Milpitas, CA
Print_ISBN
978-1-4244-4886-9
Electronic_ISBN
978-1-4244-4888-3
Type
conf
DOI
10.1109/ICCCAS.2009.5250433
Filename
5250433
Link To Document