Title :
Design of a 2.2 GHz high efficiency GaN HEMT inverse class E transmission-line power amplifier
Author :
He, Jin ; Ren, Dehao
Author_Institution :
Chengdu Univ. of Inf. Technol., Chengdu, China
Abstract :
This paper reports on the design and measurements of an inverse class E transmission-line power amplifier using a newly fabricated GaN HEMT device, NTPB0025. This amplifier was designed according to the inverse class E lumped prototype using load-pull optimizations. After that, the lumped amplifier was transformed to a transmission-line realization. The drain efficiency of 64%, PAE of 57.7%, and the output power of 41.5 dBm were measured at 2.2 GHz.
Keywords :
HEMT integrated circuits; UHF power amplifiers; circuit optimisation; gallium compounds; transmission lines; GaN; HEMT inverse class E transmission-line power amplifier; amplifier design; frequency 2.2 GHz; inverse class E lumped prototype; load-pull optimizations; Doping; Etching; Gallium nitride; HEMTs; High power amplifiers; Ion implantation; Stability; Temperature; Thin film transistors; Transmission lines;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250433
