A high-order curvature-compensated CMOS bandgap reference

Author

Zhou, Ze-kun ; Ming, Xin ; Zhang, Bo ; Li, Zhao-Ji

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

23-25 July 2009

Firstpage

652

Lastpage

656

Abstract

This paper describes a high precision 3rd-order curvature-compensated bandgap reference compatible with a standard 0.5-mum CMOS process. Utilizing the voltage to current converter and the voltage current characteristic of base-emitter junction to realize V_Tln(T) compensation, the proposed bandgap reference can implement high-order compensation. A temperature coefficient (TC) of 2.5 ppm/degC is realized with temperature ranging from -33degC to 167degC at 3.6 V power supply, and a power supply rejection ratio (PSRR) of 77 dB is achieved. The variation in the output voltage of the bandgap voltage reference is 0.24 mV when the power supply varies from 2.7 V to 5 V.

Keywords

CMOS integrated circuits; convertors; reference circuits; thermal analysis; CMOS process; base-emitter junction; high-order curvature-compensated bandgap reference; size 0.5 mum; temperature -33 degC to 167 degC; temperature coefficient; voltage 0.24 mV; voltage 2.7 V to 5 V; voltage 3.6 V; voltage-to-current converter; Analog-digital conversion; CMOS process; Circuits; Operational amplifiers; Photonic band gap; Power amplifiers; Power supplies; Resistors; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on

Conference_Location

Milpitas, CA

Print_ISBN

978-1-4244-4886-9

Electronic_ISBN

978-1-4244-4888-3

Type

conf

DOI

10.1109/ICCCAS.2009.5250436

Filename

5250436