Title :
A high-order curvature-compensated CMOS bandgap reference
Author :
Zhou, Ze-kun ; Ming, Xin ; Zhang, Bo ; Li, Zhao-Ji
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper describes a high precision 3rd-order curvature-compensated bandgap reference compatible with a standard 0.5-mum CMOS process. Utilizing the voltage to current converter and the voltage current characteristic of base-emitter junction to realize VTln(T) compensation, the proposed bandgap reference can implement high-order compensation. A temperature coefficient (TC) of 2.5 ppm/degC is realized with temperature ranging from -33degC to 167degC at 3.6 V power supply, and a power supply rejection ratio (PSRR) of 77 dB is achieved. The variation in the output voltage of the bandgap voltage reference is 0.24 mV when the power supply varies from 2.7 V to 5 V.
Keywords :
CMOS integrated circuits; convertors; reference circuits; thermal analysis; CMOS process; base-emitter junction; high-order curvature-compensated bandgap reference; size 0.5 mum; temperature -33 degC to 167 degC; temperature coefficient; voltage 0.24 mV; voltage 2.7 V to 5 V; voltage 3.6 V; voltage-to-current converter; Analog-digital conversion; CMOS process; Circuits; Operational amplifiers; Photonic band gap; Power amplifiers; Power supplies; Resistors; Temperature distribution; Voltage;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250436
