Title :
Infrared Optical Beam Induced Resistance Change (IROBIRCH) technology for IC failure localization and analysis
Author :
Weaver, Kevin ; Acedo, Henry ; Gao, Geny
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
The Infrared Optical Beam Induced Resistance Change (IROBIRCH) is a new technique in reliability testing and failure analysis. This paper describes the theory and application of the IROBIRCH system. One of applications we performed is how to isolate areas of high and low resistance at a capacitor array area on a CMOS10 chip. The results and root cause analysis are detailed step by step.
Keywords :
CMOS integrated circuits; OBIC; failure analysis; integrated circuit reliability; integrated circuit testing; CMOS chip; IC reliability testing; IROBIRCH technology; capacitor array; failure analysis; failure localization; infrared optical beam induced resistance change; Circuit faults; Energy consumption; Failure analysis; Integrated circuit testing; Laser beams; Optical beams; Photonic integrated circuits; Silicon; Surface resistance; Temperature;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
DOI :
10.1109/IRWS.2002.1194261
