Title :
Alternate method of TDDB study for aluminum oxide using magneto-resistance
Author :
Kumar, Santosh ; Knowlton, William B.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Abstract :
A sensitive and accurate method/test to predict the lifetime of aluminum oxide used as a tunnel barrier in magnetic random access memory (MRAM) has been devised. The performance of magnetic tunnel junction is dependent upon the lifetime of aluminum oxide. Aluminum oxide has also been used in high dielectric constant gate dielectric MOS devices suitable for high speed applications. This method relies upon the measurement of anti parallel and parallel resistance of the magnetic stack in a tunnel magneto resistor using aluminum oxide as a tunnel barrier. This is a more sensitive method than the conventional methods.
Keywords :
aluminium compounds; dielectric measurement; electric breakdown; life testing; magnetic storage; magnetic tunnelling; magnetoresistance; random-access storage; Al2O3; aluminum oxide; high-k gate dielectric; high-speed MOS device; lifetime testing; magnetic random access memory; magnetic tunnel junction; magnetoresistance; time-dependent dielectric breakdown; tunnel barrier; tunnel magnetoresistor; Aluminum oxide; Dielectric constant; Dielectric devices; Dielectric measurements; Electrical resistance measurement; High-K gate dielectrics; Life testing; MOS devices; Magnetic tunneling; Random access memory;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
DOI :
10.1109/IRWS.2002.1194263
