Title :
First demonstration of GaN-based vertical nanowire FET with top-down approach
Author :
Young-Woo Jo ; Dong-Hyeok Son ; Dong-Gi Lee ; Chul-Ho Won ; Jae Hwa Seo ; In Man Kang ; Jung-Hee Lee
Author_Institution :
Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
Summary form only given. GaN-based field effect transistors (FETs) are widely used in power switching and amplifier application due to its superior material properties such as wide band-gap energy, high breakdown field, and high electron saturation velocity, which results in high output current and high breakdown voltage [1]. On the other hand, nanowire transistors are extensively investigated to improve device performance such as fin-shaped FETs (FinFETs), lateral and vertical type nanowire FETs [2 - 4]. Especially, vertical nanowire FETs (VNFETs) are currently being evaluated as a promising device technology due to its negligible trapping and leakage from the buffer layer, wrap-gated structure and possibility of very short gate length (below 20 nm). VNFETs using Si, InAs and InGaAs materials were already introduced. However, GaN-based VNFETs have been never fabricated due to difficulty in obtaining vertical nanowire structure with high aspect ratio and their complex fabrication process. In this work, we fabricated the GaN-based VNFET, for the first time, by combining conventional e-beam lithography and dry etching technique with strong anisotropic TMAH wet etching.
Keywords :
III-V semiconductors; MOSFET; electron beam lithography; elemental semiconductors; etching; field effect transistors; gallium arsenide; indium compounds; nanowires; semiconductor switches; silicon; wide band gap semiconductors; FinFET; GaN; GaN-based field effect transistors; InAs; InGaAs; Si; VNFET; anisotropic TMAH wet etching; breakdown voltage; dry etching technique; e-beam lithography; electron saturation velocity; fin-shaped FET; nanowire transistors; power amplifier; power switching; vertical nanowire FET; wide band-gap energy; Gallium nitride; Logic gates; Nanoscale devices; Nanostructures; Tin; Wet etching;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175539