DocumentCode
3387306
Title
A new approach in flash-memory testing to increase quality and reduce cycle time on improvements
Author
Giglio, G. ; Masi, T. ; Mastrocola, M. ; Morgana, F.
Author_Institution
STMicroelectronics, Catania, Italy
fYear
2002
fDate
21-24 Oct. 2002
Firstpage
199
Lastpage
201
Abstract
We have developed a methodology to reduce cycle time on improvements in FLASH-Memory 0.18um CMOS devices, utilizable on all non-volatile memories. With this method it is possible to perform speedily all improvements even having statistic on few devices.
Keywords
CMOS memory circuits; flash memories; integrated circuit testing; 0.18 micron; CMOS device; cycle time; flash memory testing; nonvolatile memory; quality level; Costs; Databases; Design engineering; Failure analysis; Feedback; Flowcharts; Manufacturing; Nonvolatile memory; Statistics; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN
0-7803-7558-0
Type
conf
DOI
10.1109/IRWS.2002.1194268
Filename
1194268
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