Title :
Transport and Schottky properties of GaInP capped GaInAs/InP quantum wells with extremely high electron mobilities
Author :
Ramvall, P. ; Anand, S. ; Carlsson, N. ; Carlsson, S.-B. ; Omling, P. ; Samuelson, L. ; Seifert, W. ; Tidlund, P. ; Wang, Q. ; Wernersson, L.-E.
Author_Institution :
Dept. of Solid State Phys., Lund Univ., Sweden
Abstract :
Transport properties of a number of different modulation doped Ga 0.25In0.75As/InP quantum wells are presented. The electron mobility at helium temperature is, for the best structure, 520000 cm2/Vs, the highest reported for a ternary material. The mobilities at room temperature and 77 K are 16100 cm2/Vs and 170000 cm2/Vs, respectively. In addition, we demonstrate the importance of having single subband population in order to achieve high mobility. Photoluminescence measurements confirm the high quality of our samples. Calculations of the electronic structure reveal two electron subbands with a separation of 180 meV. The position of the first subband is verified by the photoluminescence peak energy. The Schottky properties of a gold gate on the pseudomorphic Ga0.25In0.75P capping layer are compared with those on InP. Room temperature HEMT characteristics for the optimized structure are presented
Keywords :
III-V semiconductors; Schottky barriers; electron mobility; gallium arsenide; gallium compounds; gold; high electron mobility transistors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 4.2 to 293 K; Au; Au gate; Ga0.25In0.75As-InP; Ga0.25In0.75P; GaInP capped GaInAs/InP quantum wells; HEMT characteristics; Schottky properties; electron subbands; electronic structure; extremely high electron mobilities; modulation doped QW; optimized structure; photoluminescence measurements; pseudomorphic capping layer; single subband population; transport properties; Effective mass; Electron mobility; Epitaxial layers; Helium; Indium phosphide; Inductors; Photoluminescence; Physics; Solid state circuits; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492387
