Title :
Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors
Author :
Zhichao Yang ; Yuewei Zhang ; Krishnamoorthy, Sriram ; Nath, Digbijoy N. ; Khurgin, Jacob B. ; Rajan, Siddharth
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
DC current gain greater than one was demonstrated in GaN tunneling hot electron transistors. At an emitter-base bias of 8 V, dc current gain is increased to 2.8. The results show the promise of GaN tunneling hot electron transistors for the next generation of high-frequency amplifiers. This work is funded by Office of Naval Research under the DATE MURI project (Program manager: Dr. Paul Maki).
Keywords :
HF amplifiers; III-V semiconductors; gallium compounds; hot electron transistors; semiconductor device models; tunnel transistors; DATE MURI project; DC current gain; GaN; GaN tunneling hot electron transistors; Office of Naval Research; emitter-base bias; high-frequency amplifiers; size 10 nm; voltage 8 V; Gallium nitride; Integrated circuits; Junctions; Monte Carlo methods; Nickel; Transistors; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175550
