DocumentCode :
3387517
Title :
Use of halide transport in epitaxial growth of InP and related compounds
Author :
Somogyi, K.
Author_Institution :
Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary
fYear :
1996
fDate :
21-25 Apr 1996
Firstpage :
705
Abstract :
Summary form only given. In this paper methods and results in InP (and related compounds) growth practice are reviewed, classified and summarised on the basis of the recent literature. The aim is to show the present place and role of halogen transport in epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of halogen transport. Chlorine assisted MOVPE has an increasing role
Keywords :
III-V semiconductors; atomic layer epitaxial growth; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InP; InP compounds; VPE; atomic layer epitaxy; chlorine assisted MOVPE; epitaxial growth; halide transport; selective area growth; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gaussian approximation; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Rapid thermal annealing; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
Type :
conf
DOI :
10.1109/ICIPRM.1996.492391
Filename :
492391
Link To Document :
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