Variation of Lateral Thickness techniques in SOI lateral high voltage transistors

A novel variation of lateral thickness (VLT) technique is proposed to bring a uniform surface electric field of SOI lateral high voltage devices. Comparing to the conventional RESURF device, the linear thickness of drift region increases the breakdown voltage by 40% while decreasing the drift resistance by 50%. Furthermore, single- or two-step drift thickness can be adopted to reduce fabrication difficulties when higher breakdown voltage and lower drift resistance are maintained.