Thermal behaviour of 1.3 μm vertical cavity surface emitting laser

Author

Plais, A. ; Salet, P. ; Starck, C. ; Pinquier, A. ; Derouin, E. ; Fortin, C. ; Fillion, T. ; Jacquet, J. ; Brillouet, F.

Author_Institution

Alcatel Alsthom Recherche, Marcoussis, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

723

Lastpage

726

Abstract

Room temperature, pulsed operation of 1.3 μm InGaAsP/InP vertical cavity surface emitting lasers (VCSELs) has been demonstrated. Low threshold currents have been obtained with a non buried structure having dielectric mirrors on both the p and n sides. We discuss the laser results pointing out the importance of thermal properties. The thermal resistance is estimated for p- and n-down mounted lasers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; surface emitting lasers; thermal resistance; 1.3 mum; InGaAsP/InP VCSELs; InP; dielectric mirrors; light-current characteristics; low threshold currents; n-down mounted lasers; nonburied structure; p-down mounted lasers; room temperature pulsed operation; thermal properties; thermal resistance; vertical cavity surface emitting laser; Dielectrics; Indium phosphide; Mirrors; Optical pulses; Surface emitting lasers; Surface resistance; Temperature; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492397

Filename

492397