Title :
Thermal behaviour of 1.3 μm vertical cavity surface emitting laser
Author :
Plais, A. ; Salet, P. ; Starck, C. ; Pinquier, A. ; Derouin, E. ; Fortin, C. ; Fillion, T. ; Jacquet, J. ; Brillouet, F.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
Room temperature, pulsed operation of 1.3 μm InGaAsP/InP vertical cavity surface emitting lasers (VCSELs) has been demonstrated. Low threshold currents have been obtained with a non buried structure having dielectric mirrors on both the p and n sides. We discuss the laser results pointing out the importance of thermal properties. The thermal resistance is estimated for p- and n-down mounted lasers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; surface emitting lasers; thermal resistance; 1.3 mum; InGaAsP/InP VCSELs; InP; dielectric mirrors; light-current characteristics; low threshold currents; n-down mounted lasers; nonburied structure; p-down mounted lasers; room temperature pulsed operation; thermal properties; thermal resistance; vertical cavity surface emitting laser; Dielectrics; Indium phosphide; Mirrors; Optical pulses; Surface emitting lasers; Surface resistance; Temperature; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492397
