High characteristics temperature of strain-compensated 1.3 μm InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

Author

Savolainen, P. ; Toivonen, M. ; Salokatve, A. ; Asonen, H. ; Murison, R.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

fYear

1996

fDate

21-25 Apr 1996

Firstpage

735

Lastpage

737

Abstract

In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T₀ value of about 100 K in the temperature range 20-80°C and low threshold current density of 87 A/cm² per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices

Keywords

III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; 1.3 micron; 20 to 80 C; InAsP-InGaP-InP; all solid source molecular beam epitaxy; characteristic temperature; elevated temperature operation; growth; optoelectronic device; strain-compensated multi-quantum well laser; threshold current density; Conducting materials; Indium phosphide; Molecular beam epitaxial growth; Optical transmitters; Quantum well devices; Quantum well lasers; Semiconductor lasers; Solid lasers; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492400

Filename

492400