In-situ grown dots of InP on GaAs and GaInP-a comparison

Author

Seifert, W. ; Carlsson, N. ; Castrillo, P. ; Hessman, D. ; Junno, T. ; Pistol, M.-E. ; Samuelson, L. ; Wallenberg, R.

Author_Institution

Dept. of Solid State Phys., Lund Univ., Sweden

fYear

1996

fDate

21-25 Apr 1996

Firstpage

746

Lastpage

749

Abstract

Shape, size and density of dots of InP on GaInP and GaAs surfaces, formed in-situ by the strain-induced phase transition from a two-dimensional (Frank-Van der Merwe) into a three-dimensional layer+islands (Stranski-Krastanow) morphology, are investigated. The observations support models which include the kinetics of island formation as important ingredients to explain the rather high size homogeneity of the dots

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; island structure; semiconductor growth; semiconductor quantum dots; surface phase transformations; InP; in-situ growth; island formation kinetics; quantum dots; size homogeneity; strain-induced phase transition; surface layer; three-dimensional Stranski-Krastanow morphology; two-dimensional Frank-Van der Merwe morphology; Atomic force microscopy; Epitaxial growth; Gallium arsenide; Indium phosphide; Morphology; Physics; Shape; Solid state circuits; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492403

Filename

492403