Title :
Applications of fs lasers to nonlinear spectroscopy and process control of Si
Author :
Dadap, Jerry I. ; Hu, X.F. ; Anderson, M.H. ; Beek, M.T. ; Aktsipetrov, O.A. ; Russell, N.M. ; Ekerdt, John G.
Author_Institution :
Center for Synthesis, Growth & Anal. of Electron. Mater., Texas Univ., Austin, TX, USA
Abstract :
Si(O0 1) interfaces are among the most technologically important for nonlinear optical analysis, yet their exceptionally weak interfacial second harmonic susceptibility )I12)hsa s strongly inhibited quantitative interface-specific second harmonic (SH) spectroscopy and related nonlinear optical process control applications. The advent of widely tunable. unamplified femtosecond (fs) solid-state lasers has overcome this banier by enabling unprecedented SH generation efficiency (- lo6 photons/s) with minimal interface heating.
Keywords :
Ge-Si alloys; MIS structures; adsorption; chromium; electro-optical effects; elemental semiconductors; modulation spectra; optical harmonic generation; semiconductor growth; semiconductor materials; silicon; silicon compounds; space charge; time resolved spectra; vapour phase epitaxial growth; 1 fs; H; Si-SiO/sub 2/-Cr; SiGe; UHV chemical vapor deposition; carrier dynamics; fs lasers; fs-time-resolved SH pump-probe study; hydrogen coverage; interface-specific second harmonic electro-modulation spectroscopy study; nonlinear spectroscopy; process control; real-time SH monitoring; space-charge region; Chemical technology; Harmonic analysis; Kinetic theory; Laser applications; Monitoring; Nonlinear optics; Process control; Resonance; Spectroscopy; Ultrafast optics;
Conference_Titel :
Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-3175-3
DOI :
10.1109/LEOSST.1996.540670
