Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

Author

Bing Zhou ; Tansley, T.L. ; Xin Li ; Butcher, K.S.A.

Author_Institution

Dept. of Phys., Macquarie Univ., North Ryde, NSW, Australia

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

45

Lastpage

46

Abstract

Laser-induced chemical vapour deposition (LCVD) is an attractive technology for the growth of films on fragile and thermally sensitive substrates at low temperature. The laser may simultaneously be used as a probe, both in excitation of semiconductors for in situ photoluminescence measurements and for spectroscopic analysis of MOCVD precursor dissociation paths. the authors describe application of an ArF excimer laser (193 nm, 6.4 eV) to growth and characterisation of gallium nitride.

Keywords

III-V semiconductors; chemical vapour deposition; gallium compounds; laser deposition; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 193 nm; ArF; ArF excimer laser; GaN; LCVD; MOCVD growth; MOCVD precursor dissociation paths; fragile substrate; gallium nitride; in situ characterisation; in situ photoluminescence measurements; laser-induced chemical vapour deposition; low temperature; semiconductors; spectroscopic analysis; thermally sensitive substrates; Chemical lasers; Chemical technology; Chemical vapor deposition; Laser excitation; MOCVD; Probes; Semiconductor films; Semiconductor lasers; Substrates; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540671

Filename

540671