DocumentCode
3387926
Title
Sense amplifier with offset mismatch calibration for sub 1-V DRAM core operation
Author
Moon, Jinyeong ; Chung, Byongtae
Author_Institution
DRAM Design Team II, Hynix Semicond. Inc., Icheon, South Korea
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
3501
Lastpage
3504
Abstract
In this paper, a sense amplifier circuit, which aims to operate with 1V or less supply voltage, is presented. While a conventional sense amplifier uses inverters connected in a cross-coupled manner without any special timing phase, the proposed sense amplifier circuit employs a calibration phase to provide offset voltage margin relaxation. The relaxed amount can be utilized for lowering Vcore, the DRAM core voltage, or increasing the number of Wordlines per Bitline. Also, it can be used for ensuring correct data operations in DRAM fabricated with severer process variation.
Keywords
DRAM chips; amplifiers; invertors; DRAM core operation; DRAM core voltage; calibration phase; inverters; offset mismatch calibration; sense amplifier circuit; voltage margin relaxation; Calibration; Circuits; Feedback; Inverters; MOSFETs; Operational amplifiers; Proposals; Random access memory; Transfer functions; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537834
Filename
5537834
Link To Document