• DocumentCode
    3387926
  • Title

    Sense amplifier with offset mismatch calibration for sub 1-V DRAM core operation

  • Author

    Moon, Jinyeong ; Chung, Byongtae

  • Author_Institution
    DRAM Design Team II, Hynix Semicond. Inc., Icheon, South Korea
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    3501
  • Lastpage
    3504
  • Abstract
    In this paper, a sense amplifier circuit, which aims to operate with 1V or less supply voltage, is presented. While a conventional sense amplifier uses inverters connected in a cross-coupled manner without any special timing phase, the proposed sense amplifier circuit employs a calibration phase to provide offset voltage margin relaxation. The relaxed amount can be utilized for lowering Vcore, the DRAM core voltage, or increasing the number of Wordlines per Bitline. Also, it can be used for ensuring correct data operations in DRAM fabricated with severer process variation.
  • Keywords
    DRAM chips; amplifiers; invertors; DRAM core operation; DRAM core voltage; calibration phase; inverters; offset mismatch calibration; sense amplifier circuit; voltage margin relaxation; Calibration; Circuits; Feedback; Inverters; MOSFETs; Operational amplifiers; Proposals; Random access memory; Transfer functions; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537834
  • Filename
    5537834