Title :
High linearity monolithic broadband pseudomorphic spike-doped MESFET amplifiers
Author :
Chu, S.L.G. ; Huang, J.C. ; Bertrand, A. ; Schindler, M.J. ; Struble, W. ; Binder, R. ; Hoke, W.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
A highly linear pseudomorphic spike-doped MESFET has been developed. This highly linear MESFET has been demonstrated at 10 GHz. Based on this device, two types of monolithic broadband amplifiers were designed and fabricated. Both the device and circuits achieved state-of-the-art linearity results while maintaining a low DC power consumption.<>
Keywords :
Schottky gate field effect transistors; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; 10 GHz; DC power consumption; highly linear MESFET; monolithic broadband amplifiers; pseudomorphic spike-doped MESFET amplifiers; Broadband amplifiers; Distributed amplifiers; Energy consumption; Feedback amplifiers; Frequency; Gain; Gallium arsenide; Linearity; MESFETs; Springs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247188
