DocumentCode
3387955
Title
High linearity monolithic broadband pseudomorphic spike-doped MESFET amplifiers
Author
Chu, S.L.G. ; Huang, J.C. ; Bertrand, A. ; Schindler, M.J. ; Struble, W. ; Binder, R. ; Hoke, W.
Author_Institution
Raytheon Co., Lexington, MA, USA
fYear
1997
fDate
4-7 Oct. 1997
Firstpage
211
Lastpage
214
Abstract
A highly linear pseudomorphic spike-doped MESFET has been developed. This highly linear MESFET has been demonstrated at 10 GHz. Based on this device, two types of monolithic broadband amplifiers were designed and fabricated. Both the device and circuits achieved state-of-the-art linearity results while maintaining a low DC power consumption.<>
Keywords
Schottky gate field effect transistors; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; 10 GHz; DC power consumption; highly linear MESFET; monolithic broadband amplifiers; pseudomorphic spike-doped MESFET amplifiers; Broadband amplifiers; Distributed amplifiers; Energy consumption; Feedback amplifiers; Frequency; Gain; Gallium arsenide; Linearity; MESFETs; Springs;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location
Miami Beach, FL, USA
Print_ISBN
0-7803-0773-9
Type
conf
DOI
10.1109/GAAS.1992.247188
Filename
247188
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